Input level converter for a digital MOS circuit

专利名称：Input level converter for a digital MOS

circuit

发明人：Bähring, Manfred, Dipl.-Ing.申请号：EP84107518申请日：19840628公开号：EP0130587A3公开日：19871111

摘要：for ttl signals controlled n mos same functional principles as dedicated circuitsrequires that a eingagspegelwandler, the ttl signal to the main entrance of the moscircuit is to be.this is a conventional circuit in fig. 1. this circuit is a schmitt trigger, andconsists of five mos feldeffekttransistoren and a bootstrap capacity.the transistors arepreferably of n - kanaltyp and selbstsperrend.as well, in accordance with the invention isdetected, the circuit through two further and in the claim 1 apparent way switchedtransistors to improvethe ruhestromverbrauch of pegelwandlers significantlyreduced.moreover, a good dynamic behavior, without that - in contrast to the knownschattung problem created to be taken into account.

申请人：Siemens Aktiengesellschaft

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