MMBT3904DW PDF规格书

NPN TransistorsMMBT3904DW ■ Features ● Epitaxial planar die construction ● Ideal for low power amplification and switching ● Dual NPN Transistors■ Absolute Maximum Ratings Ta = 25℃Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature rangeSymbolVCBOVCEOVEBOICPCTJTstgRating60405200200150 -55 to 150mAmW℃VUnit■ Electrical Characteristics Ta = 25℃Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Collector- emittercut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltageSymbolVCBOVCEOVEBOICBOICEXIEBOVCE(sat)VBE(sat)hFE(1) DC current gain Delay time Rise time Storage time Fall time Noise figure Collector output capacitance Transition frequencyhFE(2)hFE(3)tdtrtstfNFCobfTK6NTest Conditions Ic= 100 μA， IE=0 Ic= 1 mA， IB=0 IE= 100μA， IC=0 VCB= 60 V , IE=0 VCE= 30 V , VEB(OFF)= -3V VEB= 5V , IC=0 IC=10 mA, IB=1mA IC=50 mA, IB=5mA IC=10 mA, IB=1mA IC=50 mA, IB=5mA VCE= 1V, IC= 0.1mA VCE= 1V, IC= 10mA VCE= 1V, IC= 50mA VCC=3V, VBE= -0.5V IC=10mA , IB1=-IB2=1mA VCC=3V, IC=10mA , IB1=-IB2=1mA VCE=5V,Ic=0.1mA,f=1KHz,RS=1KΩ VCB= 5V, IE= 0,f=1MHz,f=100MHz VCE= 20V, IC= 10mA,f=100MHz300401006035352005054dBpFMHzns3000.65Min604055050500.20.30.850.95V nAVTypMaxUnit■ MarkingMarking