Method of fabricating a three-dimensional multi-ga

专利名称：Method of fabricating a three-dimensional

multi-gate device

发明人：Wen-Shiang Liao,Wei-Tsun Shiau申请号：US11161950申请日：20050823公开号：US07326617B2公开日：20080205

专利附图：

摘要：A method for fabricating a three-dimensional multi-gate device includes stepsof providing a semiconductor substrate and forming a silicon fin on the semiconductorsubstrate, the silicon fin having a top surface and two side surfaces; forming a gate

structure on the silicon fin, the gate structure partially covering the top surface and thetwo side surfaces of the silicon fin, and forming a spacer structure on both sides of thegate structure; forming two doped regions in the silicon fin under both sides of the gatestructure; and forming a stress-adjusting layer covering the gate structure.

申请人：Wen-Shiang Liao,Wei-Tsun Shiau

地址：Miao-Li Hsien TW,Kao-Hsiung Hsien TW

国籍：TW,TW

代理人：Winston Hsu

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