专利名称：APPARATUS FOR MANUFACTURING
SILICON SINGLE CRYSTALS
发明人：SHIMA, YOSHINOBU,ARAKI, KENJI,KAMIO,
HIROSHI,SUZUKI, MAKOTO
申请号：EP90914957申请日：19901012公开号：EP0450089A4公开日：19920708
摘要：An apparatus for manufacturing silicon single crystals, adapted to pull up large-diameter silicon single crystals at a high yield and with a high efficiency by a rotary CZmethod. A thermal shield the position and shielding width of which are specified isprovided as a means for preventing the solidification, which is one of the causes oflowering the yield and productive efficiency, of molten silicon near a partitioning member,in such a manner that the thermal shield faces a meniscus portion of the molten li-quid,whereby the heat radiated from the meniscus portion is shielded. This apparatus has acylindrical body, a frusto-conical body, ora cylindrical body with a central opening-carrying flange at the bottom portion thereof. The material consists mainly of a metal,such as molybdenum and tantalum, or an electric resistance heating body.
申请人：NKK CORPORATION
地址：1-2, MARUNOUCHI 1-CHOME CHIYODA-KU; TOKYO 100
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