专利名称：Apparatus for manufacturing silicon single
crystals
发明人：Yasumitsu Nakaham,Kenji Araki,Hiroshi
Kamio
申请号：US07/722259申请日：19910627公开号：US05143704A公开日：19920901
摘要：In a silicon single crystal manufacturing apparatus of the type which
continuously feeds starting material, a metallic heat keeping plate is arranged to cover apartition member dividing molten silicon into a single crystal growing section and amaterial melting section within a quartz crucible and an upper side of the materialmelting section. The metallic heat keeping plate is provided for the purpose of
preventing the occurrence of solidification of the molten silicon on the inner side of thepartition member and preventing excessive cooling of a silicon single crystal. The metallicheat keeping plate has a thickness of 3 mm or less and its material is tantalum ormolybdenum. Further, the heat keeping plate includes a straight body portion formedwith a plurality of openings for adjusting the temperature of the single crystal.
申请人：NKK CORPORATION
代理人：Michael N. Meller
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容