Vishay Siliconix
Automotive
Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V ID (A)Configuration
SO-8S1G1S2G21234Top View8765D1D1D2D2S1N-Channel MOSFETS2N-Channel MOSFETG1G2D1FEATURES
600.0554.5Dual
D2•TrenchFET® Power MOSFET
•Package with Low Thermal Resistance
Pb-freeAvailableAEC-Q101 RELIABILITY
•Passed all AEC-Q101 Reliability Testing•Characterization Ongoing
RoHS*COMPLIANTORDERING INFORMATION
PackageLead (Pb)-freeSnPb
SO-8
SQ4946EY-T1-E3SQ4946EY-T1
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
ARAMETER SYMBOLDrain-Source Voltage Gate-Source VoltageContinuous Drain Currenta
Continuous Source Current (Diode Conduction)aPulsed Drain Currentb
Single Pulse Avalanche EnergySingle Pulse Avalanche CurrentMaximum Power Dissipationb
Operating Junction and Storage Temperature Range
L = 0.1 mHTC = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C
VDS
LIMIT604.53.827.2122.41.7- 55 to + 175
AUNITV
VGS ± 20IDISEAS IASPDTJ, Tstg
IDM 30mJ AW °C
THERMAL RESISTANCE RATINGS
ARAMETER SYMBOLJunction-to-AmbientJunction-to-Case (Drain)
Notes
a.Package limited.
b.Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.c.When mounted on 1\" square PCB (FR-4 material).
PCB Mountc
RthJARthJC
LIMIT62.5-UNIT°C/W
Document Number: 74492S-81560-Rev. C, 23-Oct-08
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SQ4946EY
Vishay Siliconix
SPECIFICATIONSTC = 25 °C, unless otherwise noted
ARAMETER SYMBOLStatic
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current On-State Drain Currenta
Drain-Source On-State Resistancea Forward TransconductanceaDynamicb
Input CapacitanceOutput Capacitance
Reverse Transfer CapacitanceTotal Gate ChargecGate-Source ChargecGate-Drain ChargecTurn-On Delay Time cRise Timec
Turn-Off Delay TimecFall TimecPulsed CurrentaForward VoltageReverse Recovery TimePeak Reverse Recovery CurrentReverse Recovery Charge
Ciss
Coss VDS = 25 V, f = 1 MHzVGS = 0 V Crss Qg
Qgs VDS = 30 V, ID = 4.5 AVGS = 10 V Qgd td(on)
VDD = 30 V, RL = 30 Ω
I ≅ 1 A, VDGEN = 10 V, Rg = 6 Ωtd(off) tf ISMVSDtrrIRM(REC)
Qrr
IF = 2 A, dI/dt = 100 A/µs IF = 85 A, VGS = 0 V
tr
------------------194313113611--35-----30--20206020--60--AVnsAµCnsnC pF
VDSVGS(th)IGSS IDSS ID(on) RDS(on) gfs
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V
VGS = 0 VVGS = 0 VVGS = 0 VVGS = 10 VVGS = 10 VVGS = 10 VVGS = 10 V
VDS = 60 VVDS = 60 V, TJ = 55 °C VDS = 60 V, TJ = 175 °C
VDS ≥ 5 VID = 4.5 AID = 30 A, TJ = 125 °C ID = 30 A, TJ = 175 °C
-1.0----20-----------0.045--13
-3.0± 1002.025--0.055---S ΩAµA V nA
TEST CONDITIONS PMIN.TY.MAX.
UNIT
VDS = 15 V, ID = 4.5 A
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Notes
a.Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b.Guaranteed by design, not subject to production testing. c.Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.
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Document Number: 74492S-81560-Rev. C, 23-Oct-08
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SQ4946EY
Vishay Siliconix
TYPICAL CHARACTERISTICSTA = 25 °C, unless otherwise noted30VGS = 10 thru 5 V24ID- Drain Current (A)ID- Drain Current (A)4 V182430TC = -55 °C25 °C150 °C18121263 V0012345600123456VDS - Drain-to-Source Voltage (V)VGS - Gate-to-Source Voltage (V) Output Characteristics300 Transfer Characteristics0.20250gfs- Transconductance (S)RDS(on)- On-Resistance (Ω)0.16200150100Graph to be available upon completion of testing0.120.08Graph to be available upon completion of testing500.04002040608010012000510152025ID - Drain Current (A)ID - Drain Current (A) Transconductance
14001200 On-Resistance vs. Drain Current10VDS = 30 VID = 4.5 AVGS- Gate-to-Source Voltage (V)48608C - Capacitance (pF)100080060040020000122436CossCrssCiss6420048121620VDS - Drain-to-Source Voltage (V)Qg - Total Gate Charge (nC) CapacitanceDocument Number: 74492
S-81560-Rev. C, 23-Oct-08
Gate Charge
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TYPICAL CHARACTERISTICSTA = 25 °C, unless otherwise noted
2.2VGS = 10 VID = 4.5 AIS- Source Current (A)10201.9RDS(on) - On-Resistance(Normalized)1.61.31.0TJ = 175 °CTJ = 25 °C0.70.4-50-25025507510012515017510.0TJ - Junction Temperature (°C)0.20.40.60.81.01.2VSD - Source-to-Drain Voltage (V)1.4 On-Resistance vs. Junction Temperature
0.40.20.0ID = 250 µAVDS(V)-0.2-0.4-0.6-0.8-1.0-5048 52 56 Source Drain Diode Forward Voltage
VGS(th)Variance (V)Graph to be available upon completion of testing44 -25025507510012515017540 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C)TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
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Document Number: 74492S-81560-Rev. C, 23-Oct-08
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SQ4946EY
Vishay Siliconix
THERMAL RATINGSTA = 25 °C, unless otherwise noted
1201000100ID- Drain Current (A)10080 Graph to be available upon completion of testing 12060Graph to be available upon completion of testingIDav(A)104000255075100125150175TC - Ambient Temperature (°C) 0.10.000010.00010.001TAV (s)0.010.11 Maximum Drain Current vs. Ambient Temperature500.40.20.0 Avalanche Current vs. Time40VGS(th)Variance (V)Power (W)30ID = 250 µA-0.2-0.4-0.6-0.8201000.010.1Time (s)11030-1.0-50-250255075100125150175TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient
1000 Threshold Voltage
100ID- Drain Current (A)10Graph to be available upon completion of testing 10.10.1* VGS110100VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on)isspecified Safe Operating Area
Document Number: 74492S-81560-Rev. C, 23-Oct-08
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THERMAL RATINGSTA = 25 °C, unless otherwise noted
21Normalized Effective TransientThermal Impedance0.1Graph to be available upon completion of testing0.0110-410-310-2Square Wave Pulse Duration (s)10-11 Normalized Thermal Transient Impedance, Junction-to-Case
21Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.2Notes:0.10.10.05PDMt1t21. Duty Cycle, D =0.02Single Pulse0.01-41010-310-210-1Square Wave Pulse Duration (s)2. Per Unit Base = RthJA = 62.5°C/W3. TJM-TA = PDMZthJA(t)4. Surface Mountedt1t211030 Normalized Thermal Transient Impedance, Junction-to-Ambient
1000100101Graph to be available upon completion of testingIAS(PEAK) (A)0.10.0110-410-310-210-1tav (s)1101001000 Single Pulse Avalanche Current (Peak) vs. Time in Avalanche
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Document Number: 74492S-81560-Rev. C, 23-Oct-08
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SQ4946EY
Vishay Siliconix
THERMAL RATINGSTA = 25 °C, unless otherwise noted
1000100000E(av)(peak) (mJ)100IAS(peak) (A)Graph to be available upon completion of testing10000Graph to be available upon completion of testing10100010.1110Inductance (mH)10010025 5075100125150TJ(start) (°C) Single Pulse Avalanche Current (Peak) vs. Inductance
10 Single Pulse Avalanche Energy (Peak) vs. TJ(start)
1IAR(peak) (A)Graph to be available upon completion of testing0.10.0110-410-310-210-1tav (s)1101001000Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 25 °C
Document Number: 74492S-81560-Rev. C, 23-Oct-08
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SQ4946EY
Vishay Siliconix
THERMAL RATINGSTA = 25 °C, unless otherwise noted
101IAR(peak) (A)Graph to be available upon completion of testing0.10.0110-410-310-210-1tav (s)1101001000Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 150 °C
Note
The characteristics shown in the six graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)- Single Pulse Avalanche Current (Peak) vs. Time in Avalanche- Single Pulse Avalanche Current (Peak) vs. Inductance- Single Pulse Avalanche Energy (Peak) vs. TJ (start)
- Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 25 °C- Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 150 °C
are given for general guidelines only to enable the user to get a \"ball park\" indication of part capabilities. The data are extracted from single pulsetransient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printedcircuit board - FR4, size 1\" x 1\" x 0.062\on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?74492.
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Document Number: 74492S-81560-Rev. C, 23-Oct-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000Revision: 18-Jul-08
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