2SB1151L-T60-T资料

UNISONIC TECHNOLOGIES CO., LTD

LOW COLLECTOR

SATURATION VOLTAGE LARGE CURRENT

󰂄 FEATURES

*High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691.

12SB1151 PNP EPITAXIAL SILICON TRANSISTOR

TO-126 *Pb-free plating product number: 2SB1151L

󰂄 PIN CONFIGURATION

PIN NO. PIN NAME

1 Emitter 2 Collector 3 Base

󰂄 ORDERING INFORMATION

Order Number

Package Packing Normal Lead free 2SB1151-T60-T 2SB1151L-T60-T TO-126 Tube

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Copyright © 2005 Unisonic Technologies Co., LTD

1

QW-R204-022,A

元器件交易网www.cecb2b.com

2SB1151 PNP EPITAXIAL SILICON TRANSISTOR

󰂄 ABSOLUTE MAXIMUM RATING (Ta=25󰀀)

PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V DC IC -5 A Collector Current

-8 Pulse(Note 3) ICP

Base Current IB -1 A Ta=25℃ 1.5

Power Dissipation PD W

Tc=25℃ 20

Junction Temperature TJ 125 Operating Temperature TOPR 0 ~ +70 Storage Temperature TSTG -40 ~ +150

Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2.The device is guaranteed to meet performance specification within 0󰄊~70󰄊󰀁operating temperature range and assured by design from -40󰄊~ 85󰄊. 3.PW ≤10ms, Duty Cycle ≤50%

󰂄 ELECTRICAL CHARACTERISTICS (Ta=25󰄊, unless otherwise specified.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 -10 µA Emitter Cut-off Current IEBO VEB=-7V, IC=0 -10 µA Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-0.2A -0.14 -0.3 V Base-Emitter Saturation Voltage VBE(sat) IC=-2A, IB=-0.2A -.0.9 -1.2 V hFE 1 VCE=-1V, IC=-0.1A 60 DC Current Gain hFE 2 VCE=-1V, IC=-2A 160 400 hFE 3 VCE=-2V, IC=-5A 50 OUTPUTTurn On Time Switching Time Storage Time Fall Time tON 0.15 1 IB2IB10IB1INPUT5󰆸IB2µS tSTG 0.78 2.5 20µsec-IB1=IB2=0.2AtF ≤1%DUTY CYCLEVCC=-10V 0.18 1 Pulse test : PW ≤350 µS, Duty Cycle ≤2% Pulse

󰂄 CLASSIFICATION OF hFE2

RANK O Y RANGE 160 ~ 320 200 ~ 400

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2SB1151 PNP EPITAXIAL SILICON TRANSISTOR

󰂄 TYPICAL CHARACTERISTICS

PD-Ta

25Power Dissipation, PD(W)201510500

50

100

150

200

250

TC=TaINFINTE HEAT SINK160140IC Derating, dT(%)1201008060402000

25

50ipssDiioatditemLin dT -TC

S/b Limited75100125150175200

Ambient Temperature, Ta (󰄊)Case Temperature, TC (󰄊)

Safe Oerating Area

-10Collector Current, IC󰂀A󰂁-5-3

IC (Pulse)MAX.IC (DC)MAX.

Reverse Bias Safe Operating Area

-10Collector Current, IC󰂀A󰂁-8-6-4-20

VCEO (SUS)2m10s*20ms*0msd itemLin edioitatimip LissS/bD-1-0.5-0.3

-0.1

-1

* SINGLE NONREPETIVEPULSED Ta=25󰄊CURVES MUST BE DERATEDLINERLY WITH INCREASEIN TEMPERATUREVCEO(MAX)-3-5-10-30-50-100

-20-40-60-80-100

Collector-Emitter Voltage, VCE󰂀V󰂁Collector-Emitter Voltage, VCE󰂀V󰂁

IC-VCE

-10Collector Current, IC󰂀A󰂁-8

hFE -IC

1K50030010050301053

1

-0.01-0.03

-4-2

IB=-200mA-6

IB=-40mAIB=-30mAIB=-20mAIB=-10mAIB=0mADc Current Gain, hFEA0mmAmA50-10IB==-10I=-8BIBIB=-60mAVCE=-2VVCE=-1V0-0.4-0.8-1.2-1.6-2.0

-0.1-0.3-1-3-10

Collector-Emitter Voltage, VCE󰂀V󰂁Collector Current, IC(A)

www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 3 QW-R204-022,A 元器件交易网www.cecb2b.com

2SB1151 PNP EPITAXIAL SILICON TRANSISTOR

󰂄 TYPICAL CHARACTERISTICS

Staturation Voltage, VBE(Sat), VCE(Sat) (V)VBE(Sat) , VCE(Sat)-IC

-10-5-3

VBE(sat)-1-0.5-0.2-0.1-0.05-0.03-0.01

VCE(sat)IC/IB=10-0.03-0.1-0.3-1-3-10

Collector Current, IC(A)

UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice.

www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 4 QW-R204-022,A