POWER MOSFETS AND METHODS FOR MANUFACTURING THE SA

专利名称：POWER MOSFETS AND METHODS FOR

MANUFACTURING THE SAME

发明人：SHIANG-YU CHEN,KUO-MING WU,YI-CHUN

LIN,ALEXANDER KALNITSKY

申请号：US15013747申请日：20160202

公开号：US20170222050A1公开日：20170803

专利附图：

摘要：A semiconductor device and the method of manufacturing the same areprovided. The semiconductor device comprises a well region, a first doped region, a drain

region, a source region and a gate electrode. The first doped region of a first conductivitytype is located at a first side within the well region. The drain region of the firstconductivity type is within the first doped region. The source region of the first

conductivity type is at a second side within the well region, wherein the second side beingopposite to the first side. The gate electrode is over the well region and between thesource region and the drain region. A surface of the drain region and a surface of thesource region define a channel and the surface of the source region directly contacts thewell region.

申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

地址：HSINCHU TW

国籍：TW

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