2N3553

Silicon NPN Transistor

RF Power Driver

Description:

The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver stages in VHF equipment.

Features:

q

Specified 175MHz, 28V Characteristics: Output Power: 2.5W Minimum Gain: 10dB Efficiency: 50%

Absolute Maximum Ratings:

Collector-Emitter Voltage, VCEO

40VCollector-Base Voltage, VCB, VDG2

65VEmitter-Base Voltage, VEB, VDG2

4VCollector Current, IC

1ATotal Device Dissipation (TC = +25°C), PD

7W Derate above 25°C

40mW/°COperating Junction Temperature Range, TJ -65° to +200°CStorage Temperature Range, Tstg -65° to +200°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

C B E

Parameter

OFF Characteristics

Collector-Emitter Sustaining Voltage Voltage

Emitter-Base Breakdown VoltageCollector Cutoff Current

SymbolTest ConditionsMinTypMaxUnit404------------0.15.01.00.1

VVmAmAmAmA

VCEO(sus)IC = 200mA, IB = 0, Note 1V(BR)EBOIE = 0.1mA, IC = 0ICEOICEX

VCE = 30V, IB = 0

VCE = 30V, VBE(off) = 1.5V, TC = +200°C

VCE = 65V, VBE(off) = 1.5V

Emitter Cutoff CurrentON CharacteristicsDC Current Gain

Collector-Emitter Saturation VoltageDynamic CharacteristicsCurrent Gain-Bandwidth ProductOutput CapacitanceFunctional TestsPower Input

Common-Emitter Amplifier Power GainCollector Efficiency

Note 1.Pulsed through a 25mH inductor.

IEBOhFE

VBE = 4V, IC = 0VCE = 5V, IC = 5V

10-

--

-1.0

V

VCE(sat)IC = 250mA, IB = 50mAfTCobPinGpe

VCE = 28V, IC = 100mA, f = 100MHzVCB = 30V, IE = 0, f = 100kHzVCE = 28V, Pout = 2.5W, f = 175MHz

--

5008

-10

MHzpF

-1050

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0.25--

WdB%