TRANSPARENT CONDUCTIVE FILM, PRODUCTION METHOD THE

专利名称：TRANSPARENT CONDUCTIVE FILM,

PRODUCTION METHOD THEREFOR,MATERIAL FOR ELECTRONIC DEVICE, ANDELECTRONIC DEVICE

发明人：NAGAMOTO Koichi,KONDO

Takeshi,NAGANAWA Satoshi,SUZUKI Yuta

申请号：EP11832592.7申请日：20111013公开号：EP2628819A1公开日：20130821

专利附图：

摘要：The present invention provides a transparent conductive film including a baselayer, a gas barrier layer, and a transparent conductive layer, the gas barrier layer beingformed of a material that includes at least oxygen atoms, carbon atoms, and siliconatoms, the gas barrier layer including an area (A) in which an oxygen atom content rategradually decreases, and a carbon atom content rate gradually increases from a surfacein a depth direction, the area (A) including a partial area (A1) and a partial area (A2), thepartial area (A1) having an oxygen atom content rate of 20 to 55%, a carbon atomcontent rate of 25 to 70%, and a silicon atom content rate of 5 to 20%, based on a totalcontent rate of oxygen atoms, carbon atoms, and silicon atoms, and the partial area (A2)having an oxygen atom content rate of 1 to 15%, a carbon atom content rate of 72 to87%, and a silicon atom content rate of 7 to 18%, based on a total content rate of oxygenatoms, carbon atoms, and silicon atoms.

申请人：LINTEC Corporation

地址：23-23, Honcho Itabashi-ku Tokyo 173-0001 JP

国籍：JP

代理机构：Albrecht, Thomas

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