P-Channel Enhancement Mode MOSFET
SPP3095
DESCRIPTION APPLICATIONS
The SPP3095 is the P-Channel logic enhancement mode z Power Management in Desktop Computer
z DC/DC Converter power field effect transistors are produced using high cell
z LCD Display inverter density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application,such as DC/DC converter and Desktop computer power management.
The package is universally preferred for commercial industrial surface mount applications
FEATURES
-30V/- 8A,RDS(ON)=100mΩ@VGS=- 10V -30V/- 6A,RDS(ON)=135mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252-2L package design
PIN CONFIGURATION ( TO-252-2L )
PART MARKING
2006/03/16 Ver.2
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P-Channel Enhancement Mode MOSFET
SPP3095
PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source Drain 3 D ORDERING INFORMATION Part Number ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3095T252RG : Tape Reel ; Pb – Free Package Part Marking SPP3095 SPP3095T252RG TO-252-2L ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient VDSS -30 VGSS ±20 TA=25℃ TA=70℃ ID IDM IS PD TJ TSTG RθJA V V A -12 -8 -20 A -15 A 40 20 -55/150 -55/150 105 W ℃ ℃ ℃/W TA=25℃ TA=70℃ 2006/03/16 Ver.2
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P-Channel Enhancement Mode MOSFET
Parameter SymbolConditions Min. Typ Max.UnitSPP3095
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSSVGS=0V,ID-250uA -30 V VGS(th)VDS=VGS,ID-250uA -1.0 -3.0 IGSS IDSS RDS(on)gfs VSD VDS=0V,VGS±20V ±100 nAVDS=-24V,VGS0V -1 uAVDS=-24V,VGS=0V -5 TJ=85℃ VGS=-10V,ID-8A 0.083 0.100Ω VGS=-4.5V,ID-6A 0.117 0.135=VDS=-10V,ID-8A 8 S ==IS=-2.5A,VGS =0V -0.8 -1.2 V ==Qg 5.8 10 =VDS=-15V,VGS=-10V =nCQgs 0.8 ID≡-8A Qgd 1.5 Ciss VDS=-15V,VGS=0V Coss f=1MHz Crss 226 pF 87 19 td(on) 9 20 VDD=-15V,RL=15Ω tr 9 20 ID≡-1.0A,VGEN=-10V ns td(off) 18 35 RG=6Ω tf 6 20 2006/03/16 Ver.2
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P-Channel Enhancement Mode MOSFET
SPP3095
TYPICAL CHARACTERISTICS
2006/03/16 Ver.2
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元器件交易网www.cecb2b.com
P-Channel Enhancement Mode MOSFET
SPP3095
TYPICAL CHARACTERISTICS
2006/03/16 Ver.2
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元器件交易网www.cecb2b.com
P-Channel Enhancement Mode MOSFET
SPP3095
TYPICAL CHARACTERISTICS
2006/03/16 Ver.2
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元器件交易网www.cecb2b.com
P-Channel Enhancement Mode MOSFET
SPP3095
TO-252-2L PACKAGE OUTLINE
2006/03/16 Ver.2
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P-Channel Enhancement Mode MOSFET
SPP3095
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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SYNC Power Corporation 9F-5, No.3-2, Park Street
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Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com
2006/03/16 Ver.2
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