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FUSE FOR IN USE OF A SEMICONDUCTOR DEVICE AND METH

2024-06-13 来源:榕意旅游网
专利内容由知识产权出版社提供

专利名称:FUSE FOR IN USE OF A SEMICONDUCTOR

DEVICE AND METHOD FOR FORMING THESAME

发明人:Byung Wook BAE申请号:US12641032申请日:20091217

公开号:US20110001211A1公开日:20110106

专利附图:

摘要:Provided is a fuse of a semiconductor device that includes a Y type fuse and aninsulation layer configured to expose the Y type fuse such that an exposed portion of the

Y type fuse has a substantially ‘V’ shape. According to the present invention, metalcrack is prevented from occurring in a Y type fuse under a high temperature and highhumidity condition of a reliability test so that the reliability and competitiveness ofsemiconductor devices can be improved.

申请人:Byung Wook BAE

地址:Icheon-si KR

国籍:KR

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