Semiconductor device with fuse

专利名称：Semiconductor device with fuse发明人：Toru Endo,Yoshinori Okajima申请号：US08/166910申请日：19931215公开号：US05990537A公开日：19991123

摘要：A semiconductor device with a fuse is formed on a semiconductor substratehaving a base semiconductor substrate and an epitaxial semiconductor layer formedthereon and defining a major surface of the semiconductor substrate. An isolation regionis formed in the epitaxial semiconductor so as to completely surround and electricallyisolate a selected region of the epitaxial layer on which the narrow, blowable portion ofthe fuse is disposed. A field oxide layer and an insulating layer are formed, in turn, overthe fuse and on the main surface of the semiconductor layer and a passivation layer isformed on the insulating layer having an opening therein defined by interior sidewalls ofthe passivation layer which surround the selected region and which are disposedinteriorally of the isolation region, and through which first opening a correspondingservice of the insulating layer is exposed. A nitride layer is formed on the passivationlayer, including the sidewalls thereof defining the first opening, and covering the exposedsurface portion of the insulating layer, a second opening being formed in the nitride layerand exposing a surface portion of the insulating layer, the second window being smallerthan the first window and not greater than the blowable portion of the fuse.

申请人：FUJITSU LIMITED

代理机构：Staas & Halsey LLP

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