Method of making semiconductor device having an in

专利名称：Method of making semiconductor device

having an insulating film positioned betweentwo similarly shaped conductive films

发明人：Masahiro Ishida申请号：US09702695申请日：20001101公开号：US06440790B1公开日：20020827

专利附图：

摘要：A plurality of conductive films are formed on a semiconductor substrate with aninsulating film sandwiched between the adjacent conductive films, and at least two of the

plurality of conductive films are patterned simultaneously in the same shape. Selectedones of the plurality of conductive films are connected through viaholes formed in theinsulating film to the semiconductor substrate. High-resistance elements, capacityelements or thin-film transistors are formed by using the selected ones of the pluralityof conductive films. Thus, mask superposing allowances are made unnecessary infabricating a semiconductor device, and the number of processes for fabricating thesemiconductor device is reduced.

申请人：MITSUBISHI DENKI KABUSHIKI KAISHA

代理机构：McDermott. Will & Emery

更多信息请下载全文后查看