专利名称：Graphene base transistor having
compositionally-graded collector barrierlayer
发明人：Jaroslaw Dabrowski,Wolfgang Mehr,Johann
Christoph Scheytt,Grzegorz Lupina
申请号：US13473873申请日：20120517公开号：US09082809B2公开日：20150714
专利附图：
摘要：A junction transistor, comprising, on a substrate an emitter layer, a collector
layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layeris arranged between the base layer and the emitter layer, and a collector barrier layer isarranged between the base and the collector layers and adjacent to the graphene layer,characterized in that the collector barrier layer is a compositionally graded materiallayer, which has an electron affinity that decreases in a direction pointing from the baselayer to the collector layer.
申请人：Jaroslaw Dabrowski,Wolfgang Mehr,Johann Christoph Scheytt,GrzegorzLupina
地址：Frankfurt DE,Friedersdorf DE,Frankfurt DE,Berlin DE
国籍：DE,DE,DE,DE
代理机构：Ware, Fressola, Maguire & Barber LLP
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容