SEMICONDUCTOR CAPACITOR

专利名称：SEMICONDUCTOR CAPACITOR发明人：Ming-Tzong YANG申请号：US13893628申请日：20130514

公开号：US20130249055A1公开日：20130926

专利附图：

摘要：A capacitor structure is provided. The capacitor structure includes a plurality offirst conductive lines paralleled disposed in a conductive layer on a substrate, wherein thefirst conductive lines are isolated to each other in the conductive layer and are groupedinto a first electrode group and a second electrode group, an insulating layer formed on

the first conductive lines and in the space between the first conductive lines, a secondconductive line formed on the insulating layer electrically connected to the firstconductive lines of the first electrode group, and a third conductive line formed on theinsulating layer electrically connected to the first conductive lines of the secondelectrode group.

申请人：MediaTek Inc.

地址：Hsin-Chu TW

国籍：TW

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