Stripline, Microstrip Mixers andDetectorsTechnical Data
Features
• Small Size
• Low Noise Figure 6 dB Typical at 9 GHz• Rugged Design• High Uniformity
• High Burnout Rating
1 W RF Pulse Power Incident• Both Medium and Low Barrier Available
Package Characteristics
These diodes are designed formicrostrip and stripline use. Thekovar leads provide good
continuity of transmission lineimpedance to the diode. OutlineC2 is a plastic on ceramic
package. The ceramic is alumina.
Outline C2
CP = 0.055 pF
ANGLE CUT 30-50°ALTERNATE 0.13 (.005)DIA. HOLE 1.5 (0.06)FROM ENDCATHODE0.46 (0.018)0.30 (0.012)3.81 (0.150)1.40 (0.055)MIN.1.14 (0.045)SQUARE1.27 (0.050)0.100.36 (0.014)MAX.(0.004)MAX.TYP.DIMENSIONS IN MILLIMETERS AND (INCHES).5082-2207/095082-2794
Description/Applications
This family consists of mediumbarrier and low barrier beam leaddiodes mounted in easily handledcarrier packages. Low barrierdiodes provide optimum noisefigure at low local oscillator drivelevels. Medium barrier diodes
provide a wider dynamic range forlower distortion mixer designs.Application Note 976 presentsdesign techniques for an X-Bandmixer.
Note:
For new designs, the HSMS-286X andHSMS-820X series of surface mountmicrowave diodes are recommended.
2
Maximum Ratings
Operating and Storage Temperature Range
C2 Packaged Diodes........................................................-65°C to +150 °CPulse Power Incident at TCASE = 25°C.....................................................1 W(1 µs pulse, Du = 0.001)
CW Power Dissipation at TCASE = 25°C
(Measured in an infinite heat sink)...............................................125 mWDerate linearly to zero at maximum operating temperature.Diode Mounting Temperature in Packages
C2.............................................................................235°C for 10 sec max.Peak Inverse Voltage..................................................................................4 VThese diodes are ESD sensitive. Handle with care to avoid staticdischarge through the diode.
RF Electrical Specifications at TA = 25°C
PartNumber5082-220722092794TestConditions*Minimum batch size 20 units.TestFreq.(GHz)9.375MaximumNoiseFigureNF (dB)6.06.56.5IFImpedanceZIF (Ω) Min. Max.200 400150 350DC Load Resistance = 0 ΩL.O. Power = 1 mWIF = 30 MHz, 1.5 dB NFMaximumSWR1.5:12.0:12.0:1V = 0TypicalJunctionCapacitanceCj (pF)0.18BarrierMediumMediumLowPackageBroadband C2Typical Detector Characteristics at TA = 25°C
Medium Barrier and Low Barrier (DC Bias)
ParameterTangential SensitivityVoltage SensitivityVideo ResistanceLow Barrier (Zero Bias)
ParameterTangential SensitivityVoltage SensitivityVideo Resistance
SymbolTSSγRV
Typical Value
-44101.8
UnitsdBmmV/µWΜΩ
Test ConditionsZero Bias, RL = 10 MΩ
Pin = - 30 dBm
Video Bandwidth = 2 MHz
f = 10 GHz
SymbolTSSγRV
Typical Value
-546.61400
UnitsdBmmV/µWΩ
Test Conditions20 µA Bias, RL = 100 KΩ
Pin = - 40 dBm
Video Bandwidth = 2 MHz
f = 10 GHz
SPICE Parameters
5082-2207Parameter
Units5082-2209
5082-2794
BVV55CJ0pF0.200.20EGeV0.690.69IBVA10E-510E-5ISA
3 x 10E-104 x 10E-8N1.081.08RSΩ56PBV0.650.5PT22M
0.5
0.5
Typical Parameters
100+125°C+25°C)A-55°Cm( 10TNERRUC1 DRAWRO0.1F 0.0100.20.40.60.81.0FORWARD VOLTAGE (V)Figure 1. Typical Forward Characteristics for Medium Barrier Diodes.3
100+125°C+25°C-55°C1010.10.0100.20.40.60.8FORWARD VOLTAGE (V)Figure 2. Typical Forward Characteristics for Low Barrier Diodes. FORWARD CURRENT (mA)Typical Parameters, continued
0.10.50.2456780.30.2395.0211.51010.02500.3 mA..000.0012...3115010.010.212 GHz0.50.35.00.20.1Figure 3. Typical Admittance Characteristics, 5082-2207with Self Bias.
0.10.50.256708.30.24935.0211010.01.523 mA500...00.00012...3501110.010.212GHz0.50.35.00.20.1Figure 5. Typical Admittance Characteristics, 5082-2209and 5082-2794 with Self Bias.
4
0.10.560.2480.30.225.02050.02150 µ5A1010000....000012...35010.12 GHz010.20.50.35.00.20.1Figure 4. Typical Admittance Characteristics, 5082-2207with External Bias.
0.10.50.20.30.25.04567205032 GHz810.02500.150 µ...0000A0129...3501100.010.211120.50.35.00.20.1Figure 6. Typical Admittance Characteristics, 5082-2209and 5082-2794 with External Bias.
5
Typical Parameters, continued
50 Ω PPO STRIPLINE1/8 INCH GROUNDPLANE SPACING7.5DEVICE UNDER TESTCATHODE GROUNDED\"A\"PPOAIRNOISE FIGURE (dB)7.0GROUND10.0(0.40)6.56.04.1(0.16)PACKAGEC25.513579111315H2FREQUENCY (GHz)DIMENSION\"A\"1.91 ± 0.05(0.075 ± 0.002)2.67 ± 0.05(0.105 ± 0.002)Figure 7. Typical Noise Figure vs. Frequency for5082-2209, -2794.
Figure 8. Admittance Test Circuit.
MODEL FOR C2 DIODES
14.5 nH67.0 Ω0.318 (0.0125)εEFF. = 6.370.53 nHCJRJ67.0 Ω0.318 (0.0125)εEFF. = 6.370.065 pFDIMENSIONS IN MILLIMETERS (INCHES)1 mA Rect. Current
ParameterJunction ResistanceJunction Capacitance
SymbolRJCJ
5082-2207
3380.189
20 µA Ext. Bias5082-2207
4210.195
UnitsΩpF
www.semiconductor.agilent.comData subject to change.Copyright © 1999 Agilent Technologies, Inc.Obsoletes 5965-8846E5967-5814E (11/99)
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