专利名称：Method for making electrical contact with a
rear side of a semiconductor substrateduring its processing
发明人：Albert Birner,Martin Franosch,Matthias
Goldbach,Volker Lehmann,Jorn Lutzen
申请号：US09871013申请日：20010531
公开号：US20010055858A1公开日：20011227
摘要：A method for electrically contacting a rear side of a semiconductor substratewhen processing the semiconductor substrate includes the step of placing thesemiconductor substrate with a substrate rear side on a substrate holder such that anelectrically conductive contact layer formed of a semiconductor material is disposedbetween the semiconductor substrate and the substrate holder.
申请人：BIRNER ALBERT,FRANOSCH MARTIN,GOLDBACH MATTHIAS,LEHMANNVOLKER,LUTZEN JORN
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