SEMICONDUCTOR DEVICE AND DESIGN METHOD THEREOF

专利名称：SEMICONDUCTOR DEVICE AND DESIGN

METHOD THEREOF

发明人：Naoki KOTANI,Tokuhiko TAMAKI申请号：US12976153申请日：20101222

公开号：US20110156150A1公开日：20110630

专利附图：

摘要：A semiconductor device includes a plurality of first cells having a first cellheight, and a plurality of second cells having a second cell height. Each of the first cellshas a first MIS transistor of a first conductivity type, and a substrate contact region of a

second conductivity type. Each of the second cells has a second MIS transistor of the firstconductivity type, a power supply region of the first conductivity type, and a firstextended region of the first conductivity type that is silicidated at a surface thereof. Thefirst cell height is greater than the second cell height.

申请人：Naoki KOTANI,Tokuhiko TAMAKI

地址：Toyama JP,Osaka JP

国籍：JP,JP

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